Planar InP-InGaAs avalanche photodetectors with n-multiplication layer exhibiting a very high gain-bandwidth product

Author

Tarof, L.E.

Author_Institution

Bell-Northern Res. Ltd., Ottawa, Ont., Canada

Volume

2

Issue

9

fYear

1990

Firstpage

643

Lastpage

646

Abstract

A planar separate absorption, grading, charge, and multiplication (SAGCM) avalanche photodiode (APD) structure was designed and fabricated, allowing for an updoped multiplication layer without the use of guard rings. A very high gain-bandwidth (GBW) product of 93 GHz and DC gains exceeding 1000 have been measured for a 30- mu m-diameter device. This GBW is, to the author´s knowledge, the highest reported to date in any III-V APD. In principle, the useful gain-bandwidth product of SAGCM structures is not limited by the tunneling limit in the InP avalanche region of 140 GHz for conventional separate absorption, grading, and multiplication (SAGM) structures.<>

Keywords

III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; integrated optics; photodetectors; 30 micron; DC gains; III-V semiconductors; InP-InGaAs avalanche photodetectors; avalanche photodiodes; gain-bandwidth product; n-multiplication layer; planar separate absorption; tunneling limit; updoped multiplication layer; Absorption; Avalanche photodiodes; Bandwidth; Bit rate; Doping; Fabrication; Indium gallium arsenide; Indium phosphide; Photodetectors; Tunneling;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.59337

Filename

59337