DocumentCode :
1259955
Title :
Optimization of Specific On-Resistance of Balanced Symmetric Superjunction MOSFETs Based on a Better Approximation of Ionization Integral
Author :
Huang, Haimeng ; Chen, Xingbi
Author_Institution :
State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Volume :
59
Issue :
10
fYear :
2012
Firstpage :
2742
Lastpage :
2747
Abstract :
A breakdown voltage model based on the 2-D analytical model of the electric field distributions for the balanced and symmetric superjunction (SJ) MOSFET is presented and used to explain the different breakdown mechanisms as a function of column doping concentrations and widths. It is observed that breakdowns simultaneously occur along different electric field lines across some special symmetric points when the drift region is not fully depleted. Moreover, the minimum specific on-resistance can be obtained when the ionization integrals along these electric field lines are both in unity. For a breakdown voltage larger than 600 V, the minimum specific on-resistance Ron of the SJ structure can be reduced by larger than 13 % compared with the “suboptimum” case in the previous literature. Comparisons of results from the proposed model and simulation data show that the approximation solution exhibits excellent accuracy. The dependence values of the breakdown voltages on charge imbalance and the transient characteristics are also discussed.
Keywords :
MOSFET; approximation theory; integral equations; 2D analytical model; balanced SJ MOSFET; balanced symmetric superjunction MOSFET; breakdown voltage model; charge imbalance; column doping concentrations; drift region; electric field distributions; electric field lines; ionization integral approximation; ionization integrals; specific on-resistance optimization; transient characteristics; Approximation methods; Electric breakdown; Ionization; JFETs; MOSFETs; Numerical models; Resistance; Analytical model; breakdown voltage; specific on-resistance; superjunction (SJ);
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2012.2207961
Filename :
6261537
Link To Document :
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