Instability of Indium Zinc Oxide Thin-Film Transistors Under Transmission Line Pulsed Stress

Author

Yuan Liu ; Wei-Jing Wu ; Zhi-Feng Lei ; Lei Wang ; Qian Shi ; Yu-Rong Liu ; Yun-fei En ; Bin Li

Author_Institution

Sci. & Technol. on Reliability Phys. & Applic. of Electron. Component Lab., China Electron. Produce Reliability & Environ. Testing Res. Inst., Guangzhou, China

Volume

35

Issue

12

fYear

2014

fDate

Dec. 2014

Firstpage

1254

Lastpage

1256

Abstract

The instability of indium zinc oxide thin film transistors (IZO TFTs) is investigated under transmission line pulsed (TLP) stress by applying repeated voltage pulses with different durations (50-200 ns) to the gate with grounded source and drain. Threshold voltage increases and then electron field effect mobility decreases after TLP stress. These results are due to electron trapping in the existing traps of gate oxide near the SiO₂/IZO interface, which is verified by the subsequent annealing experiment. The instability behavior is also investigated by low-frequency noise measurements before and after TLP stress. Furthermore, influences of stress voltage and pulsewidth on the degradation effect of IZO TFT are discussed.

Keywords

annealing; electron traps; indium compounds; noise measurement; silicon compounds; thin film transistors; transmission lines; zinc compounds; IZO TFT; SiO₂-InZnO; TLP stress; annealing; electron field effect mobility; electron trapping; gate oxide; grounded drain; grounded source; indium zinc oxide thin film transistors; instability behavior; low-frequency noise measurements; repeated voltage pulses; stress voltage; threshold voltage; transmission line pulsed stress; Degradation; Electron traps; Electrostatic discharges; Indium compounds; Low-frequency noise; Stress; Thin film transistors; Threshold voltage; Indium zinc oxide (IZO); electrostatic discharge (ESD); low frequency noise (LFN); low frequency noise (LFN).; thin film transistor (TFT); transmission line pulse (TLP);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2014.2362526

Filename

6936864