Title :
IDDQ testing for deep-submicron ICs: challenges and solutions
Author :
Chen, Zhanping ; Wei, Liqiong ; Keshavarzi, Ali ; Roy, Kaushik
Author_Institution :
Intel, Hillsboro, OR, USA
Abstract :
The use of low-threshold devices in scaled low-voltage CMOS circuits leads to increased intrinsic leakage current. As a result, I DDQ testing requires different techniques to remain effective
Keywords :
CMOS integrated circuits; integrated circuit testing; leakage currents; low-power electronics; CMOS circuits; IDDQ testing; deep-submicron IC; intrinsic leakage current; low-threshold devices; scaled low-voltage circuits; CMOS logic circuits; Circuit faults; Circuit testing; Costs; Fault currents; Fault detection; Frequency; Leak detection; Leakage current; Logic gates;
Journal_Title :
Design & Test of Computers, IEEE
