Title :
Progress and outlook for MRAM technology
Author :
Tehrani, S. ; Slaughter, J.M. ; Chen, E. ; Durlam, M. ; Shi, J. ; DeHerren, M.
Author_Institution :
Phys. Sci. Res. Labs., Motorola Labs., USA
fDate :
9/1/1999 12:00:00 AM
Abstract :
We summarize the features of existing semiconductor memories and compare them to Magnetoresistive Random Access Memory (MRAM),a semiconductor memory with magnetic bits for nonvolatile storage. MRAM architectures based on Giant Magnetoresistance (GMR) and Magnetic Tunnel Junction (MTJ) cells are described. This paper will discuss our progress on improving the material structures, memory bits, thermal stability of the bits, and competitive architectures for GMR and MTJ based MRAM memories as well as the potential of these memories in the commercial memory market
Keywords :
giant magnetoresistance; magnetoresistive devices; random-access storage; reviews; thermal stability; tunnelling; GMR based MRAM memories; MRAM technology; MTJ based MRAM memories; competitive architectures; giant magnetoresistance; magnetic bits; magnetic tunnel junction; magnetoresistive random access memory; material structures; memory bits; memory market; nonvolatile storage; semiconductor memories; thermal stability; Giant magnetoresistance; Magnetic materials; Magnetic semiconductors; Magnetic tunneling; Nonvolatile memory; Potential well; Random access memory; Semiconductor materials; Semiconductor memory; Thermal stability;
Journal_Title :
Magnetics, IEEE Transactions on
