Title :
Technology assessment for the implementation of magnetoresistive elements with semiconductor components in magnetic random access memory (MRAM) architectures
Author :
Boeve, Hans ; Bruynseraede, Christophe ; Das, Jo ; Dessein, Kristof ; Borghs, Gustaaf ; De Boeck, Jo ; Sousa, Ricardo C. ; Melo, Luís V. ; Freitas, Paulo P.
Author_Institution :
IMEC, Leuven, Belgium
fDate :
9/1/1999 12:00:00 AM
Abstract :
We describe the DRAM-like approach towards a non-volatile magnetoresistive memory integrating magnetic and semiconductor devices into one cell. The speed at which the magnetic memory signal can be read depends on many factors. An important factor is the magnetic element itself, the size, magnetic characteristics and absolute resistance. Secondly, the design of the read-out electronics is a key issue. A third determining factor is the technology in which the electronics are fabricated. Some features are indicated that are essential in optimizing MRAM in future
Keywords :
magnetic storage; magnetoresistive devices; random-access storage; spin valves; MRAM architectures; absolute resistance; magnetic characteristics; magnetic element; magnetic memory signal; magnetic random access memory; magnetoresistive elements; nonvolatile magnetoresistive memory; read-out electronics; semiconductor components; spin valves; technology assessment; Anisotropic magnetoresistance; Conductors; Hall effect devices; Magnetic anisotropy; Magnetic devices; Magnetic semiconductors; Magnetic separation; Nonvolatile memory; Perpendicular magnetic anisotropy; Random access memory;
Journal_Title :
Magnetics, IEEE Transactions on
