Title :
Vertical integration of a spin dependent tunnel junction with an amorphous Si diode for MRAM application
Author :
Sousa, Ricardo C. ; Freitas, Paulo P. ; Chu, Virginia ; Conde, João P.
Author_Institution :
INESC, Lisbon, Portugal
fDate :
9/1/1999 12:00:00 AM
Abstract :
This work demonstrates the successful vertical integration of magnetic tunneling junctions with hydrogenated amorphous silicon (a-Si:H) diodes. In the finished device over 11.4% current change was measured when the junction free layer is switched in an external magnetic field, applying 0.86 V to the tunnel junction-diode series. In the integrated device, the TMR signal of the junction measured alone was 25.3% at 7 mV bias, demonstrating junction robustness and process compatibility. The ΔI/I signal of the junction-diode series was optimized by changing the junction resistance. With the present a-Si:H technology, an RC time constant below 25 ns is calculated, higher than the 2.5 ns estimated for the tunneling junction
Keywords :
amorphous semiconductors; elemental semiconductors; hydrogen; magnetic storage; magnetoresistive devices; random-access storage; semiconductor diodes; silicon; tunnelling; 0.86 V; 25 ns; 7 mV; MRAM application; RC time constant; Si:H; TMR signal; a-Si:H; amorphous Si diode; current change; external magnetic field; hydrogenated amorphous silicon; integrated device; junction resistance; junction robustness; magnetic tunneling junctions; process compatibility; spin dependent tunnel junction; vertical integration; Amorphous magnetic materials; Amorphous materials; Current measurement; Light emitting diodes; Magnetic anisotropy; Magnetic devices; Magnetic field measurement; Perpendicular magnetic anisotropy; Schottky diodes; Tunneling magnetoresistance;
Journal_Title :
Magnetics, IEEE Transactions on
