Title :
In-situ characterization of oxide growth for fabricating spin-dependent tunnel junctions
Author :
Wee, Andrew T.A. ; Wang, Shan X. ; Sin, Kyusik
Author_Institution :
Dept. of Mater. Sci. & Eng., Stanford Univ., CA, USA
fDate :
9/1/1999 12:00:00 AM
Abstract :
Ni45Fe55-Al2O3-Ni 45Fe55 spin dependent tunneling junctions with an MR ratio of ~16.5% have been fabricated. The Al2O3 barriers are formed by plasma oxidation, and the oxide growth is characterized by in-situ resistive measurements. The oxide barrier growth mode is greatly affected by process parameters, including shutter configuration, gas composition, and plasma power. The changes in oxide thickness can be modeled by a combination of the linear growth law and the generalized Mott-Cabrera law
Keywords :
MIM structures; alumina; ferromagnetic materials; giant magnetoresistance; interface magnetism; iron alloys; nickel alloys; oxidation; plasma materials processing; tunnelling; Al2O3 barriers; MR ratio; Ni45Fe55-Al2O3-Ni 45Fe55; Ni45Fe55/Al2O3/Ni 45Fe55 spin dependent tunneling junctions; fabrication; gas composition; generalized Mott-Cabrera law; in-situ characterization; in-situ resistive measurements; linear growth law; oxide barrier growth mode; oxide growth; oxide thickness; plasma oxidation; plasma power; process parameters; shutter configuration; spin-dependent tunnel junctions; Annealing; Artificial intelligence; Electrical resistance measurement; Electrodes; Oxidation; Plasma applications; Plasma materials processing; Plasma measurements; Surface resistance; Tunneling;
Journal_Title :
Magnetics, IEEE Transactions on
