35.5 GHz Parametric CMOS Upconverter

Author

Zhao, Zhixing ; Magierowski, Sebastian ; Belostotski, Leonid

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Calgary, Calgary, AB, Canada

Volume

22

Issue

9

fYear

2012

Firstpage

477

Lastpage

479

Abstract

Parametric circuit techniques are a promising means of applying CMOS to millimeter-wave (mm-wave) and sub-mm-wave front-ends. However, almost no experimental results are available for these circuits in modern silicon technologies. In this letter, a parametric 0.5-to-35.5 GHz upconverter based on an accumulation-mode MOS varactor (AMOSV) is implemented in 0.13 μm CMOS technology. It achieves a maximum conversion gain of 14 dB in the upper sideband (USB) configuration and 13 dB in the lower sideband (LSB) configuration with no dc power consumption. In the design, on-chip slow-wave coplanar waveguide interconnections are used for reducing layout area.

Keywords

CMOS integrated circuits; coplanar waveguides; field effect MIMIC; millimetre wave frequency convertors; varactors; AMOSV; LSB configuration; USB configuration; accumulation-mode MOS varactor; dc power consumption; frequency 0.5 GHz to 35.5 GHz; gain 13 dB; gain 14 dB; lower sideband configuration; millimeter-wave front-ends; on-chip slow-wave coplanar waveguide interconnections; parametric CMOS upconverter technology; parametric circuit techniques; silicon technology; size 0.13 mum; submillimetre-wave front-ends; upper sideband configuration; CMOS integrated circuits; CMOS technology; Cutoff frequency; Gain; Radio frequency; Varactors; CMOS; MOS varactor; frequency upconverter; millimeter-wave; on-chip transmission line; parametric circuit;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2012.2210864

Filename

6268298