DocumentCode
1264956
Title
DC and RF characteristics of AlN/GaN doped channel heterostructure field effect transistor
Author
Daumiller, I. ; Schmid, P. ; Kohn, E. ; Kirchner, C. ; Kamp, M. ; Ebeling, K.J. ; Pond, L.L. ; Weitzel, C.
Author_Institution
Dept. of Electron Devices & Circuits, Ulm Univ., Germany
Volume
35
Issue
18
fYear
1999
fDate
9/2/1999 12:00:00 AM
Firstpage
1588
Lastpage
1590
Abstract
First small signal, large signal and RF power characteristics of experimental 3 μm gatelength AlN/GaN devices between RT and 200°C are reported. A high drain breakdown of 42 V and the absence of dispersion effects indicate that this challenging heterostructure is indeed attractive for the development of high power/high speed devices
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; junction gate field effect transistors; power field effect transistors; semiconductor device breakdown; 20 to 200 C; 3 micron; 42 V; AlN-GaN; AlN/GaN doped channel heterostructure field effect transistor; DC characteristics; RF characteristics; drain breakdown; high power device; high speed device; large signal characteristics; small signal characteristics;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19991041
Filename
802834
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