Nonequilibrium model for semiconductor laser modulation response

Author

Chow, Weng W. ; Schneider, Hans Christian ; Koch, Stephan W. ; Chang, Chih-Hao ; Chrostowski, Lukas ; Chang-Hasnain, Connie J.

Author_Institution

Sandia Nat. Labs., Albuquerque, NM, USA

Volume

38

Issue

4

fYear

2002

fDate

4/1/2002 12:00:00 AM

Firstpage

402

Lastpage

409

Abstract

Presents a laser model for describing the effects of nonequilibrium carrier distributions. The approach is based on the coupled Maxwell-semiconductor-Bloch equations, with carrier-carrier and carrier-phonon collisions treated in the relaxation rate approximation. Using examples involving relaxation oscillation, current modulation, and optical injection, we demonstrate how the model can be used to study the influences of spectral hole burning, dynamic carrier population bottleneck, and plasma heating on semiconductor laser modulation response

Keywords

electron-phonon interactions; laser theory; optical hole burning; optical modulation; quantum well lasers; semiconductor lasers; semiconductor plasma; surface emitting lasers; VCSEL; carrier-carrier collisions; carrier-phonon collisions; coupled Maxwell-semiconductor-Bloch equations; current modulation; dynamic carrier population bottleneck; nonequilibrium carrier distributions; nonequilibrium model; optical injection; plasma heating; quantum-well gain structure; relaxation oscillation; relaxation rate approximation; semiconductor laser modulation response; spectral hole burning; Heating; Laser modes; Laser theory; Maxwell equations; Optical modulation; Plasma temperature; Quantum well lasers; Semiconductor lasers; Surface emitting lasers; Ultrafast optics;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.992554

Filename

992554