A simpler 100-V polysilicon TFT with improved turn-on characteristics

Author

Huang, Tiao-Yuan ; Wu, I-Wei ; Lewis, Alan G. ; Chiang, Anne ; Bruce, Richard H.

Author_Institution

Xerox Palo Alto Res. Center, CA, USA

Volume

11

Issue

6

fYear

1990

fDate

6/1/1990 12:00:00 AM

Firstpage

244

Lastpage

246

Abstract

An improved polysilicon high-voltage thin-film transistor (HVTFT) structure for eliminating the current-pinching phenomenon often observed in the conventional offset-gate polysilicon HVTFTs is discussed. The device employs, in lieu of implantation, a metal field plate overlapping the entire offset region to control the conductivity of the offset region. By properly biasing the field plate to distribute the drain electric field at both ends, high-voltage operation of up to 100 V, suitable for many large-area applications, is achieved. Good turn-on characteristics without current pinching effects are consistently obtained. The structure also eliminates the lightly doped drain implant required in conventional offset-gate HVTFTs, resulting in a simpler and more reproducible process.<>

Keywords

elemental semiconductors; power transistors; silicon; thin film transistors; 100 V; Si-SiO/sub 2/; TFT; drain electric field; large-area applications; metal field plate; offset region conductivity control; polysilicon high-voltage thin-film transistor; turn-on characteristics; Associate members; Conductivity; Doping; Flat panel displays; Implants; Ion implantation; Microelectronics; Printers; Thin film transistors; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.55268

Filename

55268