All-optical AND gate implementation using cross-polarization modulation in a semiconductor optical amplifier

Author

Soto, H. ; Díaz, C.A. ; Topomondzo, T. ; Erasme, D. ; Schares, L. ; Guekos, G.

Author_Institution

Div. de Fisica Aplicada, Centro de Investigacion Cientifica y de Educacion Superior de Ensenada, Baja California, Mexico

Volume

14

Issue

4

fYear

2002

fDate

4/1/2002 12:00:00 AM

Firstpage

498

Lastpage

500

Abstract

We demonstrate experimentally a new design for an all-optical AND gate operating in the gigahertz regime. The efficiency of this effect was estimated by measuring the conversion coefficients C/sub TE/TM/ and C/sub TM/TE/ indicating the TE to TM mode conversion and vice versa when the amplifier is perturbed with a wavelength tunable control beam. The all-optical gate here described differ from others developed before using semiconductor optical amplifiers in its ability to operate on nondegenerate input signals and to produce an output signal with an independent wavelength from the wavelengths of the input signals.

Keywords

light polarisation; nonlinear optics; optical design techniques; optical logic; optical modulation; optical switches; semiconductor optical amplifiers; TE to TM mode conversion; TM to TE mode conversion; all-optical AND gate implementation; conversion coefficients; cross-polarization modulation; design; efficiency; gigahertz regime; independent wavelength; nondegenerate input signals; output signal; photonic switching nodes; semiconductor optical amplifier; wavelength tunable control beam; Nonlinear optics; Optical amplifiers; Optical devices; Optical interferometry; Optical modulation; Optical polarization; Optical waveguides; Probes; Pulse amplifiers; Semiconductor optical amplifiers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.992590

Filename

992590