Status and prospects for SiC power MOSFETs

Author

Cooper, James A., Jr. ; Melloch, Michael R. ; Singh, Ranbir ; Agarwal, Anant ; Palmour, John W.

Author_Institution

Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA

Volume

49

Issue

4

fYear

2002

fDate

4/1/2002 12:00:00 AM

Firstpage

658

Lastpage

664

Abstract

SiC electronic device technology has made rapid progress during the past decade. In this paper, we review the evolution of SiC power MOSFETs between 1992 and the present, discuss the current status of device development, identify the critical fabrication issues, and assess the prospects for continued progress and eventual commercialization

Keywords

annealing; carrier mobility; field effect transistor switches; interface states; inversion layers; power MOSFET; power semiconductor switches; reviews; semiconductor device breakdown; semiconductor device reliability; silicon compounds; wide band gap semiconductors; DMOSFET; LDMOSFETs; SiC; SiC power MOSFETs; UMOSFETs; blocking voltages; fabrication issues; field effect transistors; interface state density; inversion layer mobility; oxide reliability; power switching devices; review; vertical trench MOSFETs; Chemicals; Electron mobility; Etching; Fabrication; MOSFETs; Oxidation; Semiconductivity; Semiconductor materials; Silicon carbide; Surface resistance;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.992876

Filename

992876