Title :
Semi-Analytical Model for the Transient Operation of Gate-All-Around Charge-Trap Memories
Author :
Amoroso, Salvatore Maria ; Monzio Compagnoni, Christian ; Mauri, A. ; Maconi, A. ; Spinelli, Alessandro S. ; Lacaita, Andrea L.
Author_Institution :
Dipt. di Elettron. e Inf., Politec. di Milano, Milan, Italy
Abstract :
We present a detailed semi-analytical investigation of the transient dynamics of gate-all-around (GAA) charge-trap memories. To this aim, the Poisson equation is solved in cylindrical coordinates, and a modification of the well-known Fowler-Nordheim formula is proposed for tunneling through cylindrical dielectric layers. Analytical results are validated by experimental data on devices with different gate stack compositions, considering a quite extended range of gate biases and times. Finally, the model is used for a parametric analysis of the GAA cell, highlighting the effect of device curvature on both program/erase and retention.
Keywords :
Poisson equation; dielectric materials; flash memories; semiconductor device models; Fowler-Nordheim formula; GAA charge-trap memories; Poisson equation; cylindrical coordinates; cylindrical dielectric layer; gate stack composition; gate-all-around charge-trap memories; semianalytical model; transient dynamics; transient operation; Electron traps; Logic gates; MONOS devices; Programming; Substrates; Transient analysis; Tunneling; Charge-trap (CT) memories; Fowler–Nordheim (FN) tunneling; gate-all-around (GAA) memories; semiconductor device modeling;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2011.2159010
