Title :
Air-Spacer MOSFET With Self-Aligned Contact for Future Dense Memories
Author :
Park, Jemin ; Hu, Chenming
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of California at Berkeley, Berkeley, CA, USA
Abstract :
An air-spacer transistor with self-aligned contact (SAC) is proposed. Air-spacer is created by removing the nitride spacer after the SAC plug has been formed. A three-dimensional mixed-mode simulation shows that this transistor structure has 35% smaller area, 10% faster speed, and 18% lower switching energy than a non-SAC MOSFET.
Keywords :
MOSFET; random-access storage; SAC plug; air-spacer MOSFET; dense memories; nitride spacer; self-aligned contact; three-dimensional mixed-mode simulation; $RC$ delay; Air gap technology; air-spacer technology; high speed; low-$k$ process;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2009.2034032
