DocumentCode :
1267530
Title :
Improved Stress Reliability of Analog Metal–Insulator–Metal Capacitors Using 
Dielectrics
Author :
Lin, S.H. ; Chiang, K.C. ; Yeh, F.S. ; Chin, Albert
Author_Institution :
Dept. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
Volume :
30
Issue :
12
fYear :
2009
Firstpage :
1287
Lastpage :
1289
Abstract :
We have studied the stress reliability of high-kappa Ni/TiO2/ZrO2/TiN metal-insulator-metal capacitors under constant-voltage stress. The increasing TiO2 thickness on ZrO2 improves the 125-degC leakage current, capacitance variation (DeltaC/C), and long-term reliability. For a high density of 26 fF/mum2, good extrapolated ten-year reliability of small DeltaC/C ~ 0.71% is obtained for the Ni/10-nm-TiO2/6.5-nm- ZrO2/ TiN device at 2.5-V operation.
Keywords :
MIM devices; high-k dielectric thin films; leakage currents; nickel; reliability; thin film capacitors; titanium; titanium compounds; zirconium compounds; Ni-TiO2-ZrO2-TiN; analog metal-insulator-metal capacitors; capacitance variation; constant-voltage stress; dielectrics; high-kappa metal-insulator-metal capacitors; leakage current; size 10 nm; size 6.5 nm; stress reliability; $hbox{ZrO}_{2}$ ; $hbox{TiO}_{2}$ $kappa$
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2009.2034113
Filename :
5313962
Link To Document :
