Title :
Highly reproducible ridge waveguide multielectrode DFB lasers for optical communication systems
Author :
Sundaresan, H. ; Kwan, S. ; Lord, A. ; Duncan, W.J. ; Henning, I.D. ; Stallard, W.A. ; Broughton, C.
Author_Institution :
British Telecom Res. Labs., Ipswich, UK
Abstract :
Highly reproducible 1.5 mu m multielectrode DFB lasers have been fabricated for use as transmitters in frequency shift keying (FSK) transmission systems. These devices were grown using atmospheric pressure metal-organic vapour phase epitaxy and are based on the ridge waveguide structure with a 900 mu m long cavity. In a 2.4 Gbit/s FSK system, sensitivities of -27 dBm were obtained for devices from different wafers under identical biasing conditions. This is the first time that multielectrode DFB lasers have demonstrated the degree of reproducibility required for practical systems.
Keywords :
III-V semiconductors; distributed feedback lasers; frequency shift keying; gallium arsenide; gallium compounds; indium compounds; optical communication equipment; optical waveguides; rectangular waveguides; semiconductor junction lasers; 1.5 micron; 2.4 Gbit/s; 900 micron; FSK; InGaAs; InGaAsP-InP; InP substrate; frequency shift keying transmission systems; metal-organic vapour phase epitaxy; optical communication systems; reproducibility; ridge waveguide multielectrode DFB lasers; ridge waveguide structure; transmitters;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19901206
