High field insulation relevant to vacuum microelectronic devices

Author

Sudarshan, T.S. ; Ma, Xianyun ; Muzykov, P.G.

Author_Institution

Dept. of Electr. Eng., South Carolina Univ., Columbia, SC, USA

Volume

9

Issue

2

fYear

2002

fDate

4/1/2002 12:00:00 AM

Firstpage

216

Lastpage

225

Abstract

This paper briefly introduces our recent results on high field vacuum insulation relevant to vacuum microelectronics. It addresses the key factors that contribute to the failure of the vacuum gap insulation. Approaches to the development of specific solutions to improve the vacuum gap breakdown voltages are presented. Solutions to alleviate the edge breakdown effect in the thin-film vacuum gap and to inhibit the formation of electrical activity in the spacer triple junction area were proven to be very effective in improving the vacuum insulation performance of vacuum microelectronics. The influence of the presence of an electron beam on the plain-vacuum-gap insulation is also reported.

Keywords

electron beam effects; failure analysis; vacuum breakdown; vacuum insulation; vacuum microelectronics; edge breakdown effect; electrical activity formation inhibition; electron beam; high field vacuum insulation; plain-vacuum-gap insulation; spacer triple junction area; thin-film vacuum gap; vacuum gap breakdown voltages; vacuum gap insulation failure; vacuum microelectronic devices; Aerospace electronics; Dielectrics and electrical insulation; Electrodes; Electron beams; Electron tubes; Microelectronics; Transistors; Vacuum breakdown; Vacuum systems; Vacuum technology;

fLanguage

English

Journal_Title

Dielectrics and Electrical Insulation, IEEE Transactions on

Publisher

ieee

ISSN

1070-9878

Type

jour

DOI

10.1109/94.993738

Filename

993738