Multigate GaN RF Switches With Capacitively Coupled Contacts

We present the analysis and the performance characteristics of novel III-Nitride multigate (MG) radio-frequency (RF) switches fabricated over AlGaN/GaN heterostructures using capacitively coupled contacts (C³). C³ device technology does not require contact annealing and, thus, allows for fully self-aligned processing of MG devices with tight electrode spacing. The combination of C³ electrodes with MG RF switch design results in devices with significantly lower OFF-state capacitance, higher isolation, and higher RF switching power as compared to conventional FET-based RF switches.