• DocumentCode
    1269736
  • Title

    Electrical Characteristics of \\hbox {Al}_{2} \\hbox {O}_{3}/\\hbox {TiO}_{2}/\\hbox {Al}_{2}\\hbox {O}_{3} Nanolaminate MOS Capacitor on

  • Author

    Lee, Ko-Tao ; Huang, Chih-Fang ; Gong, Jeng ; Liou, Bo-Heng

  • Author_Institution
    Inst. of Electron. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
  • Volume
    30
  • Issue
    9
  • fYear
    2009
  • Firstpage
    907
  • Lastpage
    909
  • Abstract
    In this letter, electrical characteristics of nanolaminate Al2 O3/TiO2/Al2O3 on p-GaN MOS capacitor with and without PMA and (NH4)2 SX treatments were investigated. I-V and C-V characteristics were improved by both PMA and (NH4)2SX treatments. The leakage-current densities can be improved to 3.0 ?? 10-8 and 2.2 ?? 10-8 A/cm2 at ??1 V, respectively. Almost an ideal C-V curve, the effective dielectric constant of 12.1 and the averaged Dit value of 4.3 ?? 1011 eV-1 ?? cm-2 were obtained.
  • Keywords
    MOS capacitors; alumina; annealing; current density; laminates; nanostructured materials; nanotechnology; permittivity; surface treatment; titanium compounds; (NH4)2SX treatment; Al2O3-TiO2-Al2O3; Al2O3/TiO2/Al2O3 nanolaminate MOS capacitor; GaN; PMA; effective dielectric constant; leakage-current density; post metallization annealing; $(hbox{NH}_{4})_{2}hbox{S}_{X}$; III–V semiconductor; post metallization annealing (PMA); thin dielectric films;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2009.2026295
  • Filename
    5184888
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1269736