• DocumentCode
    127105
  • Title

    Semiconductor reliability using random and wearout failure models

  • Author

    Bechtold, L.E. ; Redman, D. ; Tawfellos, Bahig

  • Author_Institution
    Boeing Commercial Airplanes, Seattle, WA, USA
  • fYear
    2014
  • fDate
    27-30 Jan. 2014
  • Firstpage
    1
  • Lastpage
    6
  • Abstract
    A new research project is developing a simple reliability prediction methodology for random failure rate and the time to intrinsic wearout. The models to be incorporated account for the latest advancement of the semiconductor technology and take into consideration the latest research in reliability assessment. Using common physics of failure (PoF) models for both intrinsic wearout and random failures, the project will seek data and analysis from semiconductor manufacturers, leaving most of the proprietary details to them, and only use the models to scale results between use conditions. This paper describes a methodology that is currently in development and not yet produced. Development of the models is based on aerospace industry collaboration and data from semiconductor manufacturers and foundries.
  • Keywords
    semiconductor device models; semiconductor device reliability; semiconductor technology; physics of failure models; random failure rate; semiconductor reliability; semiconductor technology; Aerospace industry; Integrated circuit modeling; Integrated circuit reliability; Mathematical model; Predictive models; Reliability engineering; Physics-of-Failure; Predictions; Semiconductor Reliability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability and Maintainability Symposium (RAMS), 2014 Annual
  • Conference_Location
    Colorado Springs, CO
  • Print_ISBN
    978-1-4799-2847-7
  • Type

    conf

  • DOI
    10.1109/RAMS.2014.6798499
  • Filename
    6798499