Title :
Plasma Enhanced Terahertz Rectification and Noise in InGaAs HEMTs
Author :
Mateos, Javier ; González, Toms
Author_Institution :
Dept. de Fis. Aplic., Univ. de Salamanca, Salamanca, Spain
Abstract :
In this work, we explore high frequency collective phenomena present in InGaAs HEMTs which lead to a peak in the current noise spectrum and enhance their DC response to THz signals, thus originating a resonance in the rectification of AC signals. These phenomena have been evidenced in recent experiments, in which THz detection as a result of plasma wave resonances has been demonstrated. In this paper, by means of Monte Carlo simulations, the noise spectra and the AC-DC rectification properties of the devices have been calculated and linked to the properties of the plasma oscillations within two distinct parts of the source-gate region: the capped and the recessed sections of the channel.
Keywords :
III-V semiconductors; Monte Carlo methods; gallium arsenide; high electron mobility transistors; indium compounds; plasma oscillations; plasma waves; AC signal rectification; AC-DC rectification properties; HEMT; InGaAs; Monte Carlo simulation; THz detection; THz signals; high frequency collective phenomena; noise spectra; plasma enhanced terahertz rectification; plasma oscillations; plasma wave resonances; source-gate region; Electric potential; HEMTs; Logic gates; MODFETs; Noise; Plasmas; Resonant frequency; InGaAs high electron mobility transistors (HEMTs); Monte Carlo simulation; THz detection; plasma oscillations;
Journal_Title :
Terahertz Science and Technology, IEEE Transactions on
DOI :
10.1109/TTHZ.2012.2209970
