Title :
High-reflectivity lead-salt-based Bragg mirrors for the mid-infrared range
Author :
Schwarz, T. ; Springholz, Gunther ; Seyringer, Heinz ; Krenn, Heinz ; Lanzerstorfer, Sven ; Heiss, Wolfgang
Author_Institution :
Inst. fur Halbleiter- und Festkorperphys., Johannes Kepler Univ., Linz, Austria
fDate :
12/1/1999 12:00:00 AM
Abstract :
High-quality lead-salt-based Bragg mirror stacks were fabricated on BaF2(111) substrates by molecular beam epitaxy. The mirrors consisted of Pb1-xEuxTe quarter-wavelength layer pairs with 1% and 6% Eu content and were designed for use in mid-infrared (MIR) vertical emitting devices with a PbTe active zone. From theoretical simulations, we obtained the internal reflectivity with incidence from an active resonator medium and the reflectivity spectra of Bragg/metal mirror combinations. For a 32-layer pair mirror, we measured a record stopband reflectivity for the MIR of over 99% at 5.7 μm, in excellent agreement with our calculations
Keywords :
II-VI semiconductors; infrared sources; lead compounds; mirrors; molecular beam epitaxial growth; optical design techniques; optical fabrication; optical resonators; reflectivity; semiconductor growth; semiconductor lasers; 5.7 mum; BaF2(111) substrates; Bragg mirror stacks; Bragg/metal mirror combinations; Eu content; MIR vertical emitting devices; Pb1-xEuxTe quarter-wavelength layer pairs; PbTe; PbTe active zone; active resonator medium; high-reflectivity; internal reflectivity; lead-salt-based Bragg mirrors; mid-infrared range; mirrors; molecular beam epitaxy; reflectivity spectra; stopband reflectivity; Gas lasers; Lead; Mirrors; Molecular beam epitaxial growth; Photonic band gap; Reflectivity; Semiconductor laser arrays; Surface emitting lasers; Tellurium; Vertical cavity surface emitting lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of
