Title :
Type-I quantum-well VCSEL structure on GaSb emitting in the 2-2.5 μm range
Author :
Genty, F. ; Cerutti, L. ; Garnache, A. ; Picard, E. ; Hadji, E. ; Romanini, D. ; Bournazaud, F. ; Grech, P. ; Gaillard, S. ; Alibert, C.
Author_Institution :
Centre d´´Electronique et de Micro-optoelectronique de Montpellier, Univ. Montpellier II, France
fDate :
2/1/2002 12:00:00 AM
Abstract :
The fabrication of the first optically pumped GaSb-based VCSELs emitting in the 2-2.5 μm is described. The typical structure was fabricated in two steps: a growth by molecular beam epitaxy (MBE) on GaSb substrate, and an evaporation of dielectric materials. First, a bottom lattice-matched semiconductor GaSb/AlAsSb Bragg mirror followed by a one-wavelength cavity containing a type I multiquantum-well Ga0.65In0.35As0.1Sb0.9/Al 0.35Ga0.65 As0.1Sb0.9 were MBE-grown. Then, after a whole characterisation of this 1/2 structure, a top-evaporated dielectric Bragg mirror of 10 pairs of YF3/ZnS was deposited to complete the VCSEL structure. This process allowed the fabrication of optically pumped VCSELs emitting near 2.3 μm and operating in quasi-CW (10 μs, 2kHz) regime at around 100 K. The threshold intensity was as low as 1.3 kW/cm2 and the measured output power 0.8 mW The tunability was about 100 nm and the laser linewidth <0.9 nm
Keywords :
III-V semiconductors; gallium compounds; infrared sources; laser mirrors; molecular beam epitaxial growth; optical pumping; quantum well lasers; surface emitting lasers; 2 to 2.5 micron; GaSb; bottom lattice-matched Bragg mirror; compact low-cost laser source; molecular beam epitaxy; multiquantum-well; one-wavelength cavity; optically pumped VCSEL; quasi-CW regime; threshold intensity; top-evaporated dielectric Bragg mirror; tunability; type-I quantum-well VCSEL structure;
Journal_Title :
Optoelectronics, IEE Proceedings -
DOI :
10.1049/ip-opt:20020267
