Title :
Thermal resistance of VCSELs bonded to integrated circuits
Author :
Pu, R. ; Wilmsen, C.W. ; Geib, K.M. ; Choquette, K.D.
Author_Institution :
Dept. of Electr. & Comput. Eng., Colorado State Univ., Fort Collins, CO, USA
Abstract :
The thermal resistance of vertical-cavity surface-emitting lasers (VCSELs) flip chip bonded to GaAs substrates and CMOS integrated circuits has been measured. The measurements on GaAs show that if the bonding is done properly, the bonding does not add significantly to the thermal resistance. However, the SiO2 under the CMOS bonding pad can double the thermal resistance unless measures are taken to improve the thermal conductance of these layers. Finite element simulations indicate that the thermal resistance of bonded VCSELs increases rapidly as the solder bond size and the aperture size decrease below /spl sim/10 μm.
Keywords :
CMOS integrated circuits; finite element analysis; flip-chip devices; gallium arsenide; integrated circuit bonding; integrated optoelectronics; optical interconnections; semiconductor laser arrays; surface emitting lasers; thermal resistance; 10 mum; CMOS bonding pad; CMOS integrated circuits; GaAs; GaAs substrates; SiO/sub 2/; VCSEL; aperture size; finite element simulations; flip chip bonding; solder bond size; thermal conductance; thermal resistance; Bonding; Electrical resistance measurement; Gallium arsenide; Integrated circuit measurements; Semiconductor device measurement; Surface emitting lasers; Surface resistance; Thermal conductivity; Thermal resistance; Vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
