Device design with automatic simulation system for basic CCD characteristics

Author

Tachikawa, Keishi ; Umeda, Takuya ; Oda, Yoshinori ; Kuroda, Takao

Author_Institution

ULSI Process Technol. Dev. Center, Matsushita Electron. Corp., Kyoto, Japan

Volume

44

Issue

10

fYear

1997

fDate

10/1/1997 12:00:00 AM

Firstpage

1611

Lastpage

1616

Abstract

A simulation system has been developed to automatically analyze basic electrical characteristics of a charge-coupled device (CCD) image sensor from a process simulation result. This system shortened the simulation period to approximately 1/10 by getting rid of complicated repetitious procedures. A high-performance new cell technology has been developed successfully with improving impurity distribution in shorter development time by using this system. This technology has been realized as a CCD cell pixel with CCD charge quantity of 1.8 times, effective transfer efficiency of over 99%, no image lag for driving read-out pulse voltage in comparison with conventional technology. A 1/4-in 330 K square pixel progressive-scan CCD was fabricated with this technology. These results are described to demonstrate the effectiveness of the automatic simulation system

Keywords

CCD image sensors; digital simulation; impurity distribution; semiconductor doping; semiconductor process modelling; 0.25 in; CCD characteristics; CCD image sensor; automatic simulation system; cell pixel; impurity distribution; process simulation result; progressive-scan CCD; read-out pulse voltage; transfer efficiency; Analytical models; Charge coupled devices; Charge-coupled image sensors; Electric variables; Electrodes; Image analysis; Impurities; Pixel; Steady-state; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.628812

Filename

628812