• DocumentCode
    1275293
  • Title

    Comments on "Negative capacitance effect in semiconductor devices" [by M. Ershov et al., with reply]

  • Author

    Jian-Guo Ma ; Kiat Seng Yeo ; Manh Anh Do

  • Author_Institution
    Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
  • Volume
    46
  • Issue
    12
  • fYear
    1999
  • Firstpage
    2357
  • Lastpage
    2358
  • Abstract
    For original paper, see M. Ershov et al., ibid., vol. 45, pp. 2196-2206 (Oct. 1998). The original authors tried to interpret the negative capacitance (NC) phenomenon theoretically in physics. However, the commentators point out that the definition of capacitor from I=(G+jB) V used in the paper is not correct. Using an R-L-C resonance circuit they interpret the so-called NC, that is just an inductive effect. Instead of using the conventional R-C equivalent circuit model for a diode, one should use an R-C-L resonance circuit as the equivalent circuit for the diode. In reply, Ershov et al. assert that they proposed a convenient and physically sound approach to NC treatment based on transient current analysis and highlighted typical mistakes involved in NC interpretation. They refute the criticism of the definition of capacitance in terms of admittance made by the commentators.
  • Keywords
    capacitance; equivalent circuits; negative resistance; semiconductor device models; transient analysis; R-L-C resonance circuit; admittance; capacitor definition; diode; equivalent circuit model; inductive effect; negative capacitance effect; semiconductor devices; transient current analysis; Semiconductor device modeling;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.808085
  • Filename
    808085