DocumentCode
1275293
Title
Comments on "Negative capacitance effect in semiconductor devices" [by M. Ershov et al., with reply]
Author
Jian-Guo Ma ; Kiat Seng Yeo ; Manh Anh Do
Author_Institution
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
Volume
46
Issue
12
fYear
1999
Firstpage
2357
Lastpage
2358
Abstract
For original paper, see M. Ershov et al., ibid., vol. 45, pp. 2196-2206 (Oct. 1998). The original authors tried to interpret the negative capacitance (NC) phenomenon theoretically in physics. However, the commentators point out that the definition of capacitor from I=(G+jB) V used in the paper is not correct. Using an R-L-C resonance circuit they interpret the so-called NC, that is just an inductive effect. Instead of using the conventional R-C equivalent circuit model for a diode, one should use an R-C-L resonance circuit as the equivalent circuit for the diode. In reply, Ershov et al. assert that they proposed a convenient and physically sound approach to NC treatment based on transient current analysis and highlighted typical mistakes involved in NC interpretation. They refute the criticism of the definition of capacitance in terms of admittance made by the commentators.
Keywords
capacitance; equivalent circuits; negative resistance; semiconductor device models; transient analysis; R-L-C resonance circuit; admittance; capacitor definition; diode; equivalent circuit model; inductive effect; negative capacitance effect; semiconductor devices; transient current analysis; Semiconductor device modeling;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.808085
Filename
808085
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