Title :
A 3-D Table-Based Method for Non-Quasi-Static Microwave FET Devices Modeling
Author :
Long, Yunshen ; Guo, Yong-Xin ; Zhong, Zheng
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore
Abstract :
A highly accurate method of building a large-signal modeling approach considering dispersive effect of field-effect transistors is presented in this paper. The non-quasi-static effect of the transistor is described through high-order constitutive nonlinear current sources and charge sources. The extraction and building of these sources are executed by polynomial regression, which is fast and determined by unique values. The sources are built by 3-D tables, where the added dimension is a variable integration path used to account for the dispersion effect. The performance up to the millimeter-wave frequency of the model is satisfied. The validity of the proposed technology-independent approach has been verified by both GaAs and GaN devices.
Keywords :
III-V semiconductors; gallium arsenide; microwave field effect transistors; regression analysis; semiconductor device models; wide band gap semiconductors; 3D table-based method; GaAs; GaN; charge sources; dispersive effect; field effect transistors; high-order constitutive nonlinear current sources; large-signal modeling approach; millimeter-wave frequency; nonquasistatic microwave FET device modeling; polynomial regression; variable integration path; Dispersion; IP networks; Integrated circuit modeling; Mathematical model; Radio frequency; Solid modeling; Transistors; 3-D table; High-order sources; inconsistency between RF and dc current; integration path (IP) independence; table-based model;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2012.2211611
