Title :
The correlation resistance for low-frequency noise compact modeling of Si/SiGe HBTs
Author :
Borgarino, Mattia ; Bary, Laurent ; Vescovi, Davide ; Menozzi, Roberto ; Monroy, A. ; Laurens, M. ; Plana, Robert ; Fantini, Fausto ; Graffeuil, Jacques
Author_Institution :
Dipt. di Ingegneria dell´´Informazione, Modena Univ., Italy
fDate :
5/1/2002 12:00:00 AM
Abstract :
The measurement of the correlation between the noise generators is a mandatory issue for the low-frequency noise modeling of bipolar transistors, and it is recognized as a very hard experimental task. In the present work, we introduce the concept of correlation resistance and we demonstrate that it can be usefully employed as a guideline for the low-frequency noise modeling in terms of intrinsic noise sources. As a proof of concept, the investigation technique is applied to submicron, BiCMOS-compatible Si/SiGe heterojunction bipolar transistors. It is pointed out that a satisfactory description of the transistor low-frequency noise behavior can be obtained by taking into account noise sources associated with surface recombination/fluctuation in the extrinsic base region
Keywords :
Ge-Si alloys; elemental semiconductors; heterojunction bipolar transistors; phase noise; semiconductor device models; semiconductor device noise; silicon; surface recombination; Si-SiGe; Si/SiGe HBTs; correlation resistance; extrinsic base region; heterojunction bipolar transistor; intrinsic noise sources; low-frequency noise compact modeling; submicron BiCMOS-compatible Si/SiGe heterojunction bipolar transistors; surface recombination/fluctuation; Bipolar transistors; Electrical resistance measurement; Fluctuations; Germanium silicon alloys; Guidelines; Heterojunction bipolar transistors; Low-frequency noise; Noise generators; Noise measurement; Silicon germanium;
Journal_Title :
Electron Devices, IEEE Transactions on
