High-resolution cross-sectional imaging of MOSFETs by scanning resistance microscopy

Author

Nxumalo, J.N. ; Shimizu, D.T. ; Thomson, D.J. ; Simard-Normadin, M.

Author_Institution

Dept. of Electr. & Comput. Eng., Manitoba Univ., Winnipeg, Man., Canada

Volume

18

Issue

2

fYear

1997

Firstpage

71

Lastpage

73

Abstract

The authors present high-resolution (/spl ap/40 nm) Scanning Resistance Microscopy (SRM) images of MOSFET cross sections taken with commercially available boron-doped diamond tips. The diamond tips were found to offer significant improvement in resolution over metal tips. The SRM profiles using diamond tips can delineate the source/drain regions as well as the lightly-doped drains. Furthermore, the SRM profiles allow delineation between silicide and polysilicon on the gate, as well as delineation between the silicide and diffusion in the source/drain regions.

Keywords

MOSFET; microscopy; B-doped diamond tips; C:B; MOSFET cross sections; SRM images; cross-sectional imaging; high-resolution imaging; lightly-doped drains; polysilicon; scanning resistance microscopy; silicide; source/drain regions; Atomic force microscopy; Electrical resistance measurement; High-resolution imaging; MOSFET circuits; Performance evaluation; Probes; Semiconductor device doping; Spatial resolution; Surface resistance; Surface topography;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.553048

Filename

553048