Title :
Scaling theory for cylindrical, fully-depleted, surrounding-gate MOSFET´s
Author :
Auth, Christopher P. ; Plummer, James D.
Author_Institution :
Center for Integrated Syst., Stanford Univ., CA, USA
Abstract :
We present a scaling theory for fully-depleted, cylindrical MOSFET´s. This theory was derived from the cylindrical form of Poisson´s equation by assuming a parabolic potential in the radial direction. Numerical device simulation data for subthreshold slope and DIBL were compared to the model to validate the formula. By employing the scaling theory a comparison with double-gate (DG) MOSFET´s was carried out illustrating an improvement of up to 40% in the minimum effective channel length for the cylindrical device.
Keywords :
MOSFET; semiconductor device models; DIBL; Poisson equation; cylindrical device; fully-depleted type; minimum effective channel length; model; numerical device simulation data; scaling theory; subthreshold slope; surrounding-gate MOSFET; Dielectric constant; Dielectric measurements; Geometry; Logic devices; MOSFET circuits; Numerical simulation; Poisson equations; Semiconductor devices; Silicon compounds; Substrates;
Journal_Title :
Electron Device Letters, IEEE
