The IBMCT: a novel MOS-gated thyristor structure

Author

Flores, D. ; Godignon, P. ; Vellvehi, M. ; Fernández, J. ; Hidalgo, S. ; Rebollo, J. ; Millán, Jose

Author_Institution

Univ. Autonoma de Barcelona, Spain

Volume

18

Issue

1

fYear

1997

Firstpage

10

Lastpage

12

Abstract

This paper addresses the analysis of the Insulated Base MOS-Controlled Thyristor (IBMCT), a novel MOS-thyristor structure compatible with IGBT process technology. The IBMCT turn-off process is based on the existence of a Floating Ohmic Contact (FOC) which allows fast hole removal from the p-body region. The device operation mode and its electrical characteristics are analyzed with the aid of 2-D numerical simulations. Experimental measurements confirm the ability to control both turn-on and turn-off processes by biasing the two independent gate electrodes. A comparison of the electrical characteristics with those obtained from IGBT and BRT is also provided.

Keywords

MOS-controlled thyristors; semiconductor device testing; semiconductor technology; transient response; 2-D numerical simulations; IBMCT turn-off process; IGBT process technology compatibility; MOS-gated thyristor structure; device operation mode; electrical characteristics; fast hole removal; floating ohmic contact; gate electrode biasing; impulsive switching tests; insulated base MOS-controlled thyristor; turn-off process control; turn-on process control; Electric variables; Fabrication; Forward contracts; Insulated gate bipolar transistors; Insulation; MOSFET circuits; Numerical simulation; Ohmic contacts; Thyristors; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.553060

Filename

553060