Title :
InAsSbP-InAsSb-InAs diode lasers emitting at 3.2 μm grown by metal-organic chemical vapor deposition
Author :
Wu, D. ; Kaas, E. ; Diaz, J. ; Lane, B. ; Rybaltowski, A. ; Yi, H.J. ; Razeghi, M.
Author_Institution :
Center for Quantum Devices, Northwestern Univ., Evanston, IL, USA
Abstract :
InAsSb-InAsSbP double heterostructure diode lasers have been grown by metal-organic chemical vapor deposition on (100) InAs substrates. High-output powers of 660 mW in pulse mode and 300 mW in continuous wave operation with 400-μm cavity length and 100-μm-wide aperture at 78 K have been obtained. These devices showed low threshold current density of 40 A/cm2, low internal loss of 3.0 cm/sup -1/, far-field /spl theta//sub /spl perp// of 34/spl deg/ with differential efficiency of 90% at 78 K, and high operating temperatures of 220 K.
Keywords :
III-V semiconductors; indium compounds; infrared sources; laser cavity resonators; laser transitions; optical fabrication; optical losses; semiconductor growth; semiconductor lasers; substrates; vapour phase epitaxial growth; (100) InAs substrates; /spl mu/m cavity length; /spl mu/m-wide aperture; 100 mum; 220 K; 300 mW; 400 mum; 660 mW; 78 K; 90 percent; InAs; InAsSb-InAsSbP double heterostructure diode lasers; InAsSbP-InAsSb-InAs; InAsSbP-InAsSb-InAs diode lasers; continuous wave operation; differential efficiency; high operating temperatures; high-output powers; low internal loss; low threshold current density; metal-organic chemical vapor deposition; pulse mode; Chemical lasers; Chemical vapor deposition; DH-HEMTs; Diode lasers; Gas lasers; MOCVD; Optical pulses; Pulsed laser deposition; Semiconductor lasers; Substrates;
Journal_Title :
Photonics Technology Letters, IEEE
