CMOS on FZ-high resistivity substrate for monolithic integration of SiGe-RF-circuitry and readout electronics

Author

Beck, Dietmar ; Herrmann, Michael ; Kasper, Erich

Author_Institution

Stuttgart Univ., Germany

Volume

44

Issue

7

fYear

1997

fDate

7/1/1997 12:00:00 AM

Firstpage

1091

Lastpage

1101

Abstract

The choice of a highly resistive substrate for silicon millimeter-wave integrated circuits (SIMMWIC) imposed by the requirement of low RF-substrate losses requires the adaptation of a CMOS process on float zone silicon (FZ). A comparison of n- and p-channel devices realized on high resistivity substrate (p-type, 5000 Ω·cm) and standard CMOS substrates (CZ, n-type, 4-6 Ω·cm) is given. Using careful process design, we obtained device characteristics on FZ-substrates that are closely similar to those on standard material, thus allowing direct transfer of existing circuit designs

Keywords

CMOS integrated circuits; Ge-Si alloys; elemental semiconductors; field effect MIMIC; integrated circuit design; losses; semiconductor materials; silicon; zone melting; CMOS; FZ-high resistivity substrate; RF-substrate losses; Si-SiGe; device characteristics; direct transfer; float zone method; millimeter-wave integrated circuits; process design; readout electronics; CMOS process; Dielectric losses; Dielectric substrates; Millimeter wave circuits; Millimeter wave integrated circuits; Millimeter wave technology; Monolithic integrated circuits; Radio frequency; Silicon; Thermal conductivity;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.595936

Filename

595936