Fabrication of ultrathin, highly uniform thin-film SOI MOSFETs with low series resistance using pattern-constrained epitaxy

Author

Wong, Hon Sum ; Chan, Kevin K. ; Lee, Young ; Roper, Peter ; Taur, Yuan

Author_Institution

IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA

Volume

44

Issue

7

fYear

1997

fDate

7/1/1997 12:00:00 AM

Firstpage

1131

Lastpage

1135

Abstract

We report a novel fabrication process for self-aligned, ultrathin, highly uniform thin-film SOI MOSFETs with low series resistance. Self-aligned, ultrathin SOI n-MOSFETs with 8 nm-50 nm undoped channel were fabricated. For n-MOSFETs with a 0.2 μm effective channel length, a saturation transconductance of 242 mS/mm, and a low series resistance (R_sd/=333 Ω·μm) were obtained

Keywords

MOSFET; characteristics measurement; semiconductor growth; silicon-on-insulator; vapour phase epitaxial growth; 0.2 mum; 242 mS/mm; 8 to 50 nm; I-V characteristics; Si-SiO₂; effective channel length; fabrication process; low series resistance; low-temperature oxide; pattern-constrained epitaxy; saturation transconductance; selective epitaxial growth; ultrathin SOI n-MOSFET; ultrathin highly uniform thin-film SOI MOSFETs; undoped channel; Bonding; Dielectric devices; Doping; Electric breakdown; Epitaxial growth; Fabrication; MOSFET circuits; Silicon; Transconductance; Transistors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.595941

Filename

595941