An innovative modelization of loss mechanism in silicon integrated inductors

Author

Arcioni, Paolo ; Castello, Rinaldo ; Perregrini, Luca ; Sacchi, Enrico ; Svelto, Francesco

Author_Institution

Dipt. di Elettronica, Pavia Univ., Italy

Volume

46

Issue

12

fYear

1999

fDate

12/1/1999 12:00:00 AM

Firstpage

1453

Lastpage

1460

Abstract

In this paper, we present an improved lumped-element equivalent circuit of silicon integrated inductors, which accurately takes into account parasitic effects and separately models the effect of metal and substrate losses. We describe an efficient procedure to deduce all the elements of the equivalent circuit from wideband, two-port measurements of the S-parameters of the inductor. The separate characterization of metal and substrate losses allows us to evaluate separately their contribution to the inductor´s Q-factor. We also report the results of the characterization of some CMOS and BiCMOS integrated inductors designed to be included in radio frequency integrated circuits operating at 1.8 GHz

Keywords

BiCMOS integrated circuits; CMOS integrated circuits; Q-factor; S-parameters; UHF integrated circuits; elemental semiconductors; equivalent circuits; inductors; integrated circuit modelling; losses; lumped parameter networks; silicon; 1.8 GHz; BiCMOS IC; CMOS IC; Q-factor; S-parameters; Si; lumped element equivalent circuit model; metal losses; parasitic effects; radio frequency integrated circuit; silicon integrated inductor; substrate losses; wideband two-port measurement; BiCMOS integrated circuits; CMOS technology; Conductivity; Equivalent circuits; Gallium arsenide; Inductors; Integrated circuit technology; Radio frequency; Radiofrequency integrated circuits; Silicon;

fLanguage

English

Journal_Title

Circuits and Systems II: Analog and Digital Signal Processing, IEEE Transactions on

Publisher

ieee

ISSN

1057-7130

Type

jour

DOI

10.1109/82.809531

Filename

809531