• DocumentCode
    1280293
  • Title

    Architectures for efficient electrophosphorescent organic light-emitting devices

  • Author

    Adachi, Chihaya ; Thompson, Mark E. ; Forrest, Stephen R.

  • Author_Institution
    Dept. of Electr. Eng., Princeton Univ., NJ, USA
  • Volume
    8
  • Issue
    2
  • fYear
    2002
  • Firstpage
    372
  • Lastpage
    377
  • Abstract
    We discuss several device architectures leading to high-efficiency organic electrophosphorescent (EP) light emission. An external electroluminescence efficiency (ηext) of (10.0 ± 0.5) % was realized by doping fac-tris(2-phenylpyridine)iridium (Ir(ppy) 3) into a 2,9-dimethyl-4,7-diphenyl-1,10-phenenthroline (BCP) electron transport layer. Direct exciton formation on the phosphor dopant avoids exciplex formation at the interface of unipolar hole and electron transport layers. Further, triplet exciton and carrier dynamics in a double heterostructure were investigated to determine the location and width of the exciton formation zone. High-efficiency EP is also demonstrated in a simplified two layer architecture using a 4,4´-N, N´-dicarbazole-biphenyl (CBP) ambipolar carrier transport host
  • Keywords
    electron mobility; excitons; light emitting diodes; organic compounds; phosphorescence; 10 percent; 2,9-dimethyl-4,7-diphenyl-1,10-phenenthroline; 4,4´-N, N´-dicarbazole-biphenyl; ambipolar carrier transport host; carrier dynamics; device architecture; direct exciton formation; doping; double heterostructure; electron transport layer; electron transport layers; electrophosphorescent organic light-emitting devices; exciplex formation; exciton formation zone; external electroluminescence efficiency; high-efficiency organic electrophosphorescent light emission; phosphor dopant; triplet exciton; unipolar hole transport layers; Doping; Electroluminescence; Excitons; Lead compounds; Materials science and technology; Organic light emitting diodes; Phosphorescence; Phosphors; Photonics; Temperature;
  • fLanguage
    English
  • Journal_Title
    Selected Topics in Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    1077-260X
  • Type

    jour

  • DOI
    10.1109/2944.999192
  • Filename
    999192