DocumentCode :
1280638
Title :
Lifetime RC time delay of on-chip copper interconnect
Author :
Sun, Ming ; Pecht, Michael G. ; Barbe, David
Author_Institution :
Philips Semicond., San Jose, CA, USA
Volume :
15
Issue :
2
fYear :
2002
fDate :
5/1/2002 12:00:00 AM
Firstpage :
253
Lastpage :
259
Abstract :
Increasing resistance and RC time delay induced by an oxidation in a copper line during its lifetime may limit copper-based metallization for technologies with critical dimension. Based on the mechanisms of resistance, constriction resistance and material diffusion, two dynamic models to access lifetime behavior of resistance and RC time delay were developed and discussed. These models also provide a means to gain insight into the correlation between the resistance and RC time delay of copper interconnect and such key variables as feature dimension, operating condition, and oxidation
Keywords :
ULSI; chemical interdiffusion; copper; delay estimation; electric resistance; integrated circuit interconnections; integrated circuit modelling; oxidation; Cu; Cu based metallization; Cu on-chip interconnect; ULSI applications; constriction resistance; dynamic models; feature dimension; lifetime RC time delay; material diffusion; operating condition; oxidation; resistance lifetime behavior; Chemical vapor deposition; Copper; Corrosion; Delay effects; Integrated circuit interconnections; Oxidation; Silicon; Sun; Switches; Thermal stresses;
fLanguage :
English
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
Publisher :
ieee
ISSN :
0894-6507
Type :
jour
DOI :
10.1109/66.999601
Filename :
999601
Link To Document :
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