DocumentCode :
1280907
Title :
Direct extraction of nonlinear FET C-V functions from time domain large signal measurements
Author :
Currás-Francos, M.C. ; Tasker, P.J. ; Fernandez-Barciela, M. ; Campos-Roca, Y. ; Sánchez, E.
Author_Institution :
ETSI Telecomunicacion, Vigo Univ., Spain
Volume :
35
Issue :
21
fYear :
1999
fDate :
10/14/1999 12:00:00 AM
Firstpage :
1789
Lastpage :
1791
Abstract :
A simple technique for extracting the nonlinear intrinsic capacitances in a quasi-static HEMT model from large signal time domain microwave measurements is presented. This method is based on the use of a suitable load-pull configuration around a vector nonlinear network analyser
Keywords :
capacitance; high electron mobility transistors; microwave field effect transistors; microwave measurement; network analysers; semiconductor device measurement; semiconductor device models; time-domain analysis; large signal time domain microwave measurements; load-pull configuration; nonlinear FET C-V functions; nonlinear intrinsic capacitances; quasi-static HEMT model; time domain large signal measurements; vector nonlinear network analyser;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19991260
Filename :
809969
Link To Document :
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