Title :
High-temperature Schottky diodes with thin-film diamond base
Author :
Gildenblat, G.Sh. ; Grot, S.A. ; Hatfield, C.W. ; Badzian, A.R. ; Badzian, T.
Author_Institution :
Pennsylvania State Univ., University Park, PA, USA
Abstract :
High-temperature (500-580 degrees C) current-voltage (I-V) characteristics of gold contacts to boron-doped homoepitaxial diamond films prepared using a plasma-enhanced chemical vapor deposition (CVD) method are described. Schottky diodes were formed using gold contacts to chemically cleaned boron-doped homoepitaxial diamond films. These devices incorporate ohmic contacts formed by annealing Au(70 nm)/Ti(10 nm) layers in air at 580 degrees C. The experiments with homoepitaxial diamond films show that the leakage current density increases with the contact area. This implies that a nonuniform current distribution exists across the diode, presumably due to crystallographic defects in the diamond film. As a result, Au contacts with an area >1 mm/sup 2/ are essentially ohmic and can be used to form back contacts to Schottky diodes. Schottky diodes fabricated in this matter also show rectifying I-V characteristics in the 25-580 degrees C temperature range.<>
Keywords :
Schottky-barrier diodes; boron; chemical vapour deposition; diamond; elemental semiconductors; gold; ohmic contacts; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; semiconductor-metal boundaries; vapour phase epitaxial growth; 25 to 580 C; Au-C:B; Au-Ti-C:B; CVD; PECVD; Schottky diodes; back contacts; contact area; crystallographic defects; current voltage characteristics; high temperature Schottky diodes; high temperature electronics; homoepitaxial diamond films; large area contacts; leakage current density; nonuniform current distribution; ohmic contacts; plasma-enhanced chemical vapor deposition; rectifying I-V characteristics; semiconductors; temperature range; thin-film diamond base; Annealing; Chemical vapor deposition; Gold; Leakage current; Ohmic contacts; Plasma chemistry; Plasma devices; Plasma properties; Schottky diodes; Transistors;
Journal_Title :
Electron Device Letters, IEEE
