Title :
Study of high frequency response of self-organised stacked quantum dot lasers at room temperature
Author :
Mao, M.-H. ; Heinrichsdorff, F. ; Krost, A. ; Bimberg, D.
Author_Institution :
Inst. fur Festkorperphys., Tech. Univ. Berlin, Germany
fDate :
9/11/1997 12:00:00 AM
Abstract :
The high frequency response of self-organised stacked InAs/GaAs quantum dot lasers grown by MOCVD is investigated through relaxation oscillation measurements at room temperature. The highest relaxation oscillation frequency for a 265 μm cavity laser at room temperature is 5.3 GHz, corresponding to a 3 dB cutoff frequency of 8.2 GHz. Good static properties, such as high internal quantum efficiency (91%) and low transparency current density (40 A/cm2) at room temperature are also obtained
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; quantum well lasers; semiconductor quantum dots; 5.3 to 8.2 GHz; 91 percent; InAs-GaAs; MOCVD; cutoff frequency; high frequency response; internal quantum efficiency; relaxation oscillation frequency; room temperature; self-organised stacked quantum dot lasers; transparency current density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19971105
