Title :
10 Gbit/s long wavelength pin-HEMT photoreceiver grown on GaAs
Author :
Hurm, V. ; Benz, W. ; Bronner, W. ; Dammann, M. ; Jakobus, T. ; Kaufel, G. ; Köhler, K. ; Lao, Z. ; Ludwig, M. ; Raynor, B. ; Rosenzweig, J. ; Schlechtweg, M.
Author_Institution :
Fraunhofer-Inst. fur Angewandte Festkorperphys., Freiburg, Germany
fDate :
9/11/1997 12:00:00 AM
Abstract :
The first long wavelength pin-HEMT photoreceiver grown on GaAs has been manufactured using a 0.3 μm gate length AlGaAs-GaAs HEMT process. At a wavelength of 1.55 μm the monolithically integrated InGaAs pin photodiode has responsivity of 0.40 A/W, and the photoreceiver has a -3 dB bandwidth of 6.9 GHz. Clear and open eye diagrams for a 10 Gbit/s 1.55 μm optical data stream have been demonstrated
Keywords :
HEMT integrated circuits; digital communication; gallium arsenide; integrated optoelectronics; optical receivers; p-i-n photodiodes; 0.3 micron; 1.55 micron; 10 Gbit/s; 6.9 GHz; AlGaAs-GaAs; AlGaAs-GaAs HEMT process; GaAs; GaAs substrate; Gbit/s optical data stream; InGaAs; InGaAs PIN photodiode; PIN-HEMT photoreceiver; long wavelength photoreceiver; monolithically integrated photodiode;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19971072
