DocumentCode :
1281795
Title :
A Self-Rectifying 
Bipolar RRAM With Sub-50- 
Set/Reset Curren
Author :
Tran, X.A. ; Zhu, W. ; Liu, W.J. ; Yeo, Y.C. ; Nguyen, B.Y. ; Yu, Hong Yu
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
Volume :
33
Issue :
10
fYear :
2012
Firstpage :
1402
Lastpage :
1404
Abstract :
In this letter, a bipolar resistive switching RAM based on Ni/AlOy/n+-Si which exhibits high potential to realize transistor-free operation for cross-bar array is successfully demonstrated. The proposed device shows well-behaved bipolar memory performance with self-rectifying behavior in low-resistance state (>; 700 at 0.2 V), a high on/off resistance ratio (>;103), a good retention characteristic (>; 104 s at 100 °C ), and a wide readout margin for cross-bar architecture (number of word line N >; 25 for worst case condition).
Keywords :
aluminium compounds; elemental semiconductors; nickel; random-access storage; silicon; Ni-AlO-Si; bipolar resistive switching random access memory; cross-bar architecture; cross-bar array; current 50 muA; high on-off resistance ratio; readout margin; retention characteristic; self-rectifying bipolar RRAM; subset-reset current; temperature 100 degC; transistor-free operation; voltage 0.2 V; worst case condition; Arrays; Electron devices; Nickel; Resistance; Silicon; Switches; Bipolar; resistive random access memory (RRAM); resistive switching (RS); self-rectifying;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2012.2210855
Filename :
6296683
Link To Document :
