Title :
11 dB 0-50 GHz coplanar distributed amplifier IC based on 0.25 μm non-recessed self-aligned gate GaAs P-HEMTs
Author :
Yang, Sung-Gi ; Ryu, Gi-Hyon ; Seo, Kwang-Seok
Author_Institution :
Sch. of Electr. Eng., Seoul Nat. Univ., South Korea
fDate :
10/28/1999 12:00:00 AM
Abstract :
A cascode distributed amplifier IC has been designed and fabricated using a 0.25 μm non-recessed self-aligned gate (SAG) GaAs P-HEMT and coplanar IC technology. Through the SAG process and an optimised epitaxial layer structure, excellent device performance has been obtained without gate recessing, and the device yield and uniformity were high enough for IC applications. The fabricated seven-stage cascode distributed amplifier IC has an 11 dB gain and a 3 dB bandwidth of 50 GHz with excellent uniformity in the IC characteristics. The gain-bandwidth product obtained (180 GHz) is comparable or even superior to that of the previous distributed amplifiers based on a shorter-length, recessed gate GaAs P-HEMT
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; coplanar waveguides; distributed amplifiers; field effect MMIC; gallium arsenide; integrated circuit yield; semiconductor epitaxial layers; 0 to 50 GHz; 0.25 micron; 11 dB; GaAs; HEMT ICs; coplanar IC technology; coplanar distributed amplifier IC; device yield; gain-bandwidth product; nonrecessed self-aligned gate; optimised epitaxial layer structure;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19991312
