DocumentCode
1282010
Title
Negative backside thermoreflectance modulation of microscale metal interconnects
Author
Teo, J.K.J. ; Chua, C.M. ; Koh, L.S. ; Phang, J.C.H.
Author_Institution
Centre for Integrated Circuit Failure Anal. & Reliability (CICFAR), Nat. Univ. of Singapore, Singapore, Singapore
Volume
47
Issue
14
fYear
2011
Firstpage
821
Lastpage
822
Abstract
The variation of backside reflectance modulation effects on metal line samples at different electrical bias and silicon backside thicknesses is investigated. Negative reflected intensity modulations are observed and are one to two orders of magnitude larger than the values from published results. It was found that the negative reflected intensity modulation with electrical bias depends on the temperature variation of the absorption coefficient while observed positive reflectance intensity modulation is due to temperature variation of the reflectance.
Keywords
absorption coefficients; elemental semiconductors; integrated optoelectronics; monolithic integrated circuits; silicon; thermoreflectance; Si; absorption coefficient; backside thermoreflectance modulation; electrical bias; metal line; microscale metal interconnects; negative reflected intensity modulations; silicon backside thickness; temperature variation;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2011.0302
Filename
5961283
Link To Document