Bottom-Contact Pentacene Thin-Film Transistors on Silicon Nitride

Author

Stott, James ; Kumatani, Akichika ; Minari, Takeo ; Tsukagoshi, Kazuhito ; Heutz, Sandrine ; Aeppli, Gabriel ; Nathan, Arokia

Author_Institution

Dept. of Electron. & Electr. Eng., Univ. Coll. London, London, UK

Volume

32

Issue

9

fYear

2011

Firstpage

1305

Lastpage

1307

Abstract

We fabricate high-performance pentacene thin-film transistors (TFTs) using lithographic processes compatible with industry standard amorphous silicon (a-Si) TFT fabrication. Bottom-contact bottom-gate pentacene TFTs realized with silicon nitride (SiN_x) gate dielectric show effective mobility values of 0.59 cm²/Vs, contact resistances as low as 2.4 kΩ·cm , and low threshold voltages. These results demonstrate the viability of using SiN_x as a gate dielectric for vacuum-deposited organic TFTs for large-area and flexible electronic applications.

Keywords

silicon compounds; thin film transistors; SiN_x; amorphous silicon TFT fabrication; bottom-contact pentacene thin-film transistors; flexible electronic application; high-performance pentacene thin-film transistors; large-area electronic application; silicon nitride; vacuum-deposited organic TFT; Contact resistance; Dielectrics; Logic gates; Pentacene; Silicon; Thin film transistors; Contact resistance; organic thin film transistors; pentacene; silicon nitride;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2011.2160520

Filename

5961606