Title :
High-quality active inductors
Author :
D´Angelo, G. ; Fanucci, L. ; Monorchio, A. ; Monterastelli, A. ; Neri, B.
Author_Institution :
Dipt. di Ingegneria dell´´Inf., Pisa Univ., Italy
fDate :
9/30/1999 12:00:00 AM
Abstract :
A high-quality active integrated inductor is presented. The circuit has an inductance of 20 nH and a quality factor of 47 at 1.8 GHz. It is designed to be realised using standard silicon bipolar technology and consumes 2.6 mW at a supply voltage of 3 V
Keywords :
Q-factor; UHF integrated circuits; active networks; bipolar analogue integrated circuits; inductors; integrated circuit layout; 1.8 GHz; 2.6 mW; 3 V; Si; active integrated inductor; high-Q inductors; high-quality active inductors; quality factor; standard Si bipolar technology;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19991199
