Title :
Efficient high power reliable InGaAs/AlGaAs (940 nm) monolithic laser diode arrays
Author :
He, X. ; Ovtchinnikov, A. ; Yang, S. ; Harrison, J. ; Feitisch, A.
Author_Institution :
Opto Power Corp., Tucson, AZ, USA
fDate :
9/30/1999 12:00:00 AM
Abstract :
198 W continuous wave (CW) power has been demonstrated for a 1 cm wide InGaAs/AlGaAs (940 nm) monolithic laser diode array. Power conversion efficiency as high as 62% has been achieved for the array. Initial lifetests at 45 and 60 W CW optical power for 2850 and 4800 μm emitting aperture devices show very good reliability
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; gallium arsenide; indium compounds; laser beams; laser reliability; optical fabrication; quantum well lasers; semiconductor laser arrays; waveguide lasers; 1 cm; 198 W; 2850 mum; 45 W; 4800 mum; 60 W; 62 percent; 940 nm; CW optical power; InGaAs-AlGaAs; InGaAs/AlGaAs laser; continuous wave power; emitting aperture devices; high power reliable laser diode arrays; initial lifetests; monolithic laser diode array; monolithic laser diode arrays; power conversion efficiency; reliability;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19991194
