Title :
AC Performance of Polysilicon Leaky-Mode MSM Photodetectors
Author :
Pownall, Robert ; Kindt, Joel ; Nikkel, Phil ; Lear, Kevin L.
Author_Institution :
Colorado State Univ., Fort Collins, CO, USA
Abstract :
Pulse response of polysilicon metal-semiconductor-metal (MSM) photodetectors fabricated in a standard CMOS processes is described, including demonstration of pulse full-width at half-max (FWHM) of 1.32 ns. Pulse FWHM as low as 0.81 ns has been measured, as have 10%-90% rise times of 0.39 ns. Measured detector performance is limited by laser diode modulation capabilities. An analytic expression for the time domain response in the presence of body and contact recombination is reported.
Keywords :
CMOS integrated circuits; metal-semiconductor-metal structures; optical interconnections; photoconductivity; photodetectors; semiconductor lasers; AC performance; CMOS process; laser diode modulation; metal-semiconductor-metal photodetectors; polysilicon leaky-mode MSM photodetectors; pulse full-width at half-max; pulse response; time domain response; CMOS process; Contacts; Detectors; Diode lasers; Grain boundaries; Integrated circuit measurements; Optical pulses; Optical waveguides; Photoconducting materials; Photoconductivity; Photodetectors; Pulse measurements; Schottky barriers; Spontaneous emission; Complementary metal-oxide-semiconductor (CMOS)-compatible optoelectronic integrated circuit; leaky-mode metal-semiconductor-metal photodetectors; optical interconnect; photoconductivity;
Journal_Title :
Lightwave Technology, Journal of
DOI :
10.1109/JLT.2010.2063016
